国家/地区 美国（68） 韩国（56） 日本（45） 世界知识产权组织（40） 中国（34） 欧洲专利局（EPO）（18） 台湾（15） 印度（6） 加拿大（4） 新加坡（4） 德国（3） 英国（3） 以色列（3） 西班牙（2） 香港（2） 俄罗斯（2）
IPC部 B（93）
IPC大类 C01（93）
IPC小类 C01B（93）
IPC C01B031/02（93）
发明人 NOMOTO K（5） OGUNI T（5） KOKUNI T（4）
LEE S（4） NAGATA T（4） OSADA T（4）
CHANDRA B（3） CHOI J（3） CHOI J Y（3）
GUO J（3） GUO J W（3） HE X（3）
KIM H（3） KIMURA N（3） KOBAYASHI T（3）
公开年 2013（55） 2012（27） 2014（11）
申请年 2012（93）
专利权人 SEMICONDUCTO.（10） SAMSUNG ELEC.（6） SAMSUNG TECH.（6） HANWHA TECHW.（5）
UNIV SUNGKYU.（5） PANASONIC CO.（4） UNIV SUNGKYU.（4） HANWHA AEROS.（3）
HON HAI PREC.（3） HONGFUJIN PR.（3） INT BUSINESS.（3） JAPAN SCI T.（3）
JAPAN SCI TE.（3） SONY CORP（3） UNIV TSINGHU.（3） BASF AG（2）
BASF CHINA C.（2） BASF SE（2） CHANDRA B（2） DOKURITSU GY.（2）

Manufacture of laminate used for thin film solar cell, involves smoothing uneven surface of substrate by forming resin layer in uneven surface, and laminating substrate and graphene film which are bonding together, through resin layer.

FUJII K, SATO M

Graphene film roll comprises graphene film, resin layer, and base material, where resin layer is obtained using resin with predetermined adhesive peel strength after curing.

YAMADA T, SHIMADA N

Unitary graphene matrix composite for e.g. tablets comprises matrix of closely packed/chemically bonded graphene planes, and is made by heat-treating graphene oxide gel; and carbon or graphite filler phase of components such as carbon black.

ZHAMU A, WANG M, XIONG W, JANG B Z

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Sulfur doped graphene nanosheet, useful as a cathode material in a lithium ion battery, comprises graphene oxide and sulfur with a specified weight ratio.

JOON H J, YOUNG S Y

Manufacture of graphene oxide complex for electrode, involves applying ultrasound to mix of graphene oxide dispersed solution and nickel hydroxide precursor solution, such that nickel hydroxide is provided between graphene oxide layers.

KIM J, JIN J, JEON S, YOU H

Manufacturing method of graphene involves growing copper single crystal film on spinel single crystal plane substrate, and growing graphene by chemical vapor deposition method with carbon-containing source gas.

NOZAWA K, YOSHII S

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of graphene film used as transparent conductive film, involves growing graphene on substrate, contacting graphene with another substrate, removing substrate, and stretching graphene and fixing laminated material.

FUJII K, SATO M

Manufacture of graphene involves supplying process gas containing carbon source on substrate, and pre-processing substrate using oxidative gas plasma to form graphene layer on substrate.

CHUN S H, KIM Y S