国家/地区 韩国（7） 美国（2）
IPC部 C（7） B（4） H（2）
IPC大类 C01（7） B01（3） C23（3）
H01（2）
IPC小类 C01B（7） B01J（3） C23C（3）
H01B（2）
IPC C01B031/02（7）
发明人 HAN D J（2） SEO T S（2）
公开年 2014（3） 2015（3）
申请年 2013（7）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（7）

Solution, useful for a coating ink, which is useful in oxygen and moisture permeation prevention materials, antistatic materials and electromagnetic shielding materials, comprises reduced graphene oxide powder and a reducing agent.

AHN S I, CHOI K C, KIM K J

Producing heteroatom doped graphene used for e.g. organic solar cells, comprises reacting substituted catechol compound with protic solvent to form solution, followed by forming thin film by polymerizing, reduction on the film, carbonizing.

LEE H S, RYU S W, YOU I

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Manufacture of three-dimensional graphene-metal catalyst complex material involves injecting solution containing graphene oxide and metal catalyst precursor solution or metal catalyst solution, phase-separating, and annealing.

HAN D J, SEO T S

Manufacturing three-dimensional graphene-polymer complex comprises mixing graphene oxide and hydrophilic liquid containing magnetic nanoparticle to obtain liquid droplet, heating liquid droplet, soaking in monomer solution and polymerizing.

HAN D J, SEO T S

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S