国家/地区 中国（6）
IPC部 H（4） C（3）
IPC大类 H01（4） C01（2） C09（2）
IPC小类 H01L（4） C01B（2） C09K（2）
IPC C01B031/04（2） C09K005/14（2） H01L021/336（2）
发明人 WANG H（6）
公开年 2014（4）
申请年 2013（6）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Graphene device manufacturing method, involves forming PMMA layer on PVA layer, where thicknesses of PVA layer and PMMA layer are in specific range, and graphene layer formed in PMMA layer.

WANG H, JIANG M, XIE X, WU T, SUN Q, XIE H

Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.

WANG H, XIE X, WANG L, ZHANG Y, LIU J

Manufacturing method of graphene field effect transistor, involves etching surface of carbon nanotransistor and connecting carbon nanotransistor to sub-electrodes to form graphene nanometer belt on semiconductor substrate.

SUN Q, XIE X, WU T, XIE H, WANG H

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q