国家/地区 中国（6）
IPC部 C（4） B（2） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 WANG Z（6）
公开年 2013（5）
申请年 2013（6）
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（6）

Preparation of zinc-tin-sulfur/graphene oxide composite used for semiconductor photocatalyst, involves mixing and dispersing graphene oxide, copper compound, zinc compound, tin compound and sulfur compound in carrier solution.

LI Y, LI H, ZHANG P, WANG Z, WU J, ZHOU Z, LIN Y

Preparing double-layer graphene thin film used in field of e.g. micro-electronics, comprises e.g. coating catalyst on the surface of metal foil/thin film substrate, drying, placing in reaction chamber, pumping vacuum, and filling hydrogen.

LI P, WANG Z, CHEN Y, ZHANG W, LIU J

Preparation of epitaxial graphene, involves cleaning surface of silicon carbide substrate in induction heating graphite boat, evacuating, cooling, re-evacuating, and cooling to room temperature.

CHEN Y, HAO X, LI P, LI Y, WANG Z, ZHANG W, LIU J

Liquid phase fluorine intercalation of silicon surface silicon carbide epitaxial graphene comprises e.g. immersing cleaned sample to be intercalated in mixed acid solution, adding molybdenum metal, reacting, cleaning, and drying.

LI Y, LIU J, CHEN Y, HAO X, LI P, WANG Z, ZHANG W

Silicon surface silicon carbide substrate graphene photo-electric device, has epitaxial layer provided with silicon surface silicon carbide substrate, carbon buffer layer and graphite layer, and electrode provided with leading-out wire.

WANG Z, CHEN Y, HAO X, ZHANG W, LI P, LI Y, LIU J

Field emission electron source, has graphene thin film layer oriented perpendicular to conductive substrate on carbon nano-tube array that is connected with end of carbon nano-tube to form integral structure with graphene thin film layer.

CHEN Z, TANG N, WANG Z