国家/地区 美国（21） 世界知识产权组织（14） 中国（13） 欧洲专利局（EPO）（9） 韩国（9） 日本（6） 德国（3） 台湾（3） 香港（2） 新加坡（2） 土耳其（2）
IPC部 B（24）
IPC大类 B82（24）
IPC小类 B82Y（24） C23C（24） C01B（18）
H01L（9） C30B（4） H01G（4）
B05D（3） B32B（3） C03C（3）
B01J（2） C01G（2） C04B（2）
C09D（2） H01J（2） H01M（2）
IPC B82Y030/00（24）
发明人 GUO S（2） OZKAN C S（2） OZKAN M（2）
WANG W（2）
公开年 2013（12） 2014（7） 2015（5）
申请年 2013（24）
专利权人 UNIV CALIFOR.（3） GUO S（2） OZKAN C S（2） OZKAN M（2）
SAMSUNG ELEC.（2） UNIV SUNGKYU.（2） WANG W（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Producing patterned graphene comprises irradiating focal point on metal substrate surface with laser beam in the presence of carbon dioxide and moving the beam relative to surface so that focal point is displaced along the pattern.

ZHAO C, DONG J, DONG X, QIAN X

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

PREPARATION OF A COMPOSITE MATERIAL BASED ON GRAPHENE AND BIMETAL NANO PARTICLES.

BIRIS A R, COROS M, LAZAR D M, POGACEAN F, PRUNEANU S M

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Graphene semiconductor, useful in electrical device e.g. FET, single electron transistor and LED, comprises graphene and a metal atomic layer comprising a metal i.e. sodium disposed on graphene which transfers charge with the graphene.

AHN J, SEO J, PARK J, JEON C, AHN J R, JEON C H, PARK J H, SEO J T

Capacitor cathode foil structure manufacturing method, involves entering carbon precursor into reaction chamber, depositing graphene layer on surface of base foil, and forming graphene layer by graphene thin film.

CHEN M, LIN Q, WANG Y, LIN C, LIN C F, CHEN M T, WANG Y Y