国家/地区 韩国（8） 美国（8） 欧洲专利局（EPO）（3） 中国（2） 世界知识产权组织（2）
IPC部 C（9）
IPC大类 C01（9） H01（6） B01（2）
B82（2） C23（2） C25（2）
IPC小类 C01B（9）
IPC C01B031/02（9）
发明人 LEE J（9）
公开年 2014（6） 2015（2）
申请年 2013（9）
专利权人 LEE J（3） SAMSUNG ELEC.（3） SNU R DB FO.（2） TOSHIBA SAMS.（2）
UNIV SEOUL N.（2）

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Apparatus for fabricating graphene comprises light source for irradiating graphite oxide layer on substrate; light source for irradiating irradiated graphite oxide layer; control unit for controlling irradiation from the light sources.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Fabricating graphene, i.e. an allotrope of carbon, comprises irradiating graphite oxide layer on substrate with light from first light source, and irradiating the irradiated graphite oxide layer with light from second light source.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Patterning graphene with DNA structure, comprises forming DNA pattern and forming graphene on DNA pattern.

GYU P I, HA P S, HAN N Y, HONG P J, MO Y S, TAEK L J, WON J S, JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Method for fabricating three-dimensional graphene crystalline foam for use as super capacitor, involves applying temperature and pressure to closed packed structure that forms graphene sheet layered around skelet powder.

LEE J, OEZYILMAZ B, KAHYA O, BARBAROS O, OZYILMAZ B, OEZYILMAZ B