国家/地区 韩国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（4） C01B031/04（4） C30B029/02（3）
B82Y030/00（2） B82Y040/00（2） C23C016/26（2）
C30B025/02（2） C30B025/18（2） C30B029/36（2）
发明人
公开年 2014（3） 2013（2）
申请年 2013（6）
专利权人

Manufacture of monocrystalline graphene involves forming high-temperature portion on substrate with metal thin film using high-heat generating device, supplying carbon source, and contacting carbon source with high-temperature portion.

OH E, LEE D, LEE S, JANG H

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Growing graphene on a substrate, comprises forming a metal oxide layer on substrate using reactive metal oxide to prepare structure, and growing graphene by heat treatment, while exposing the structure to gas containing carbon.

CHOI J W

Rolled copper foil used for manufacture of graphene for e.g. mercury-free fluorescent lamp, has specified ratio of maximum value for detection strengths occurring under specified conditions based on specific direct pole figure.

CHIBA YOSHIHIRO, CHIBA Y

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T