国家/地区 日本（7） 美国（5） 韩国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8） C08L（3） H01B（3）
H01G（3） H01M（3） B01J（2）
B82Y（2） C08K（2） C09D（2）
H01L（2） H05K（2）
IPC C01B032/05（8）
发明人
公开年 2015（4） 2014（2） 2016（2）
申请年 2014（8）
专利权人

Flexible electroconductive material used for forming e.g. transducer, comprises matrix containing polycyclic aromatic component and oligomer component, and electroconductive agent containing graphene and flaky graphite.

ITO T, YOSHIKAWA H, NAKASHIMA N, TAKAHARA A, MATSUNO R, KOBAYASHI A, TAKAGAKI Y

Anode material used in lithium-ion battery, comprises carbon particle having preset particle size, and including defective portions which are grooves formed by cathodically exfoliating graphene layers from particles.

CHENG Q, TAMURA N

Semiconductor element has substrate, graphene provided on one surface of substrate, and convex portion whose at least one portion comprises metal.

KOJIMA E, KANO K

Conductive carbon used in material for forming electrodes, comprises hydrophilic solid-phase component having preset microcrystal size in graphene surface direction calculated from Raman spectrum.

ISHIMOTO S, KUBOTA S, MINATO Y, NAOI K, NAOI W, TAMAMITSU K

Graphite-type carbon raw material used as graphene precursor, has rhombohedral system graphite layer and hexagonal system graphite layer in ratio more than preset value, as measured using peak intensities specific planes of layers.

HASEGAWA S, KAMIYA N, SHOJI H, NAGISA K, HASEGAWA SHOJI, KAMIYA NAGISA, SHEN Y

Forming polyaniline/reduced graphene oxide composite involves dispersing graphene oxide in aqueous solution of anionic emulsifying agent to form dispersion, dissolving aniline oligomer in solvent and mixing oligomer solution with dispersion.

BOCCHINI S, CHIOLERIO A, PORRO S

Partially reduced graphene oxide composite material used for supercapacitor electrode material comprises partially reduced graphene oxide having string-shaped carbon black on surface.

KANG F, SU F, YANG Q, LI Y, LI B

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J