国家/地区 美国（18） 韩国（11） 中国（7） 世界知识产权组织（5） 欧洲专利局（EPO）（3） 台湾（2）
IPC部 C（15） H（15） B（4）
IPC大类 H01（15） C01（12） B82（2）
C09（2） C12（2）
IPC小类 C01B（12） H01L（10） H01M（4）
B82Y（2） H01B（2）
IPC C01B031/04（11） H01L029/16（7） H01L021/768（3）
H01L023/532（3） H01L029/66（3） H01L029/786（3）
H01M004/36（3） H01M004/587（3） B82Y030/00（2）
C01B031/02（2） C01B032/182（2） C01B032/186（2）
C01B032/194（2） C01B033/00（2） H01B001/24（2）
发明人 LEE J（21）
公开年 2016（12） 2015（8）
申请年 2015（21）
专利权人 SAMSUNG ELEC.（8） LEE J（4） KOREA INST S.（2） LEE C（2）
LG CHEM LTD（2） UNIV SEOUL N.（2）

Adsorption material used in heat pump for adsorbing/desorbing refrigerant, comprises graphene scroll of graphene sheet wrapping along axis, and modifier grafting on interlayer and outside of graphene scroll and containing hydrophilic group.

LEE J, HUANG C, KANG Y, JENG M, PENG S, LI J, HUANG Q, ZHENG M, LEE J H, HUANG C Y, JENG M S, PENG S L

Polypropylene-graphene composite material for e.g. vehicle component, comprises polypropylene substrate, and organic graphene oxide masterbatch obtained by reacting modified graphene oxide with maleic anhydride-grafted polypropylene.

KONG N K, KIM H S, LEE J H, LEE B C, OH Y S, PARK S Y, CHOI S M, WOO J H, KIM H, WU Y, KONG L, LEE J, LEE B, CUI C, PIAO X, YU C

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Method of using chemical reaction transparency of graphene for electrode for battery, involves forming laminating catalyst and graphene on one layer, and forming layer containing catalyst and graphene on other layer including catalyst.

CHOI W J, LEE J O, CHANG H J, KONG K J, AN K S, WON J C, HYUN J C, SEUNG H J, SI E C, CHOI W, LEE J, CHANG H, KONG K, AN K, CHANGHYUNJOO, HUN J S, EUN C S

AA' stacked graphite used as e.g. electrode material comprises graphene stacked the sequence of AA' in which alternate graphene layers exhibiting AA' stacking are horizontally translated by half hexagon from zigzag AA stacking of graphene.

LEE J, LEE S, AHN J, LEE W

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Silicon-carbon nano tube composite comprises e.g. three-dimensional structure of carbon nano tube aggregate, silicon provided on inner portion and outer portion of surface of carbon nano tube aggregate, and graphene layer.

KIM M S, HWANG E, LEE J

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y

Method for locally doping e.g. graphene, involves removing voltage between two-dimensional material and substrate, where density of portion of two-dimensional material proximate probe is compared to density of remainder of material.

WONG D, VELASCO J, JU L, KAHN S, LEE J, GERMANY C E, ZETTL A K, WANG F, CROMMIE M F

Manufacturing graphene structure involves providing gas including semiconductor material and gas including carbon into reaction chamber, and performing chemical vapor deposition to form core of semiconductor material and shell of graphene.

LEE E, CHOI B, LEE J, WHANG D