国家/地区 美国（7） 韩国（5） 中国（4） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C23C016/26（8）
发明人
公开年 2016（5） 2017（3）
申请年 2016（8）
专利权人

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Graphene film manufacturing device for forming transparent display, has bottom roll chamber where catalyst metal film is rolled in loading bobbin, that is connected to deposition chamber.

KIM Y K, YONG K K

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Preparation of graphene-encapsulated metal nanoparticles used in e.g. LED, involves supplying preset mole ratio of gas comprising carbon dioxide, methane and water on metal catalyst and reacting and cooling resultant product.

SON I H, LEE S J

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F