国家/地区 美国（5） 欧洲专利局（EPO）（2）
IPC部 B（5）
IPC大类 C30（5） B82（4） C01（4）
C23（2） G01（2） H01（2）
IPC小类 C30B（5）
IPC B82Y040/00（4） B82Y030/00（3） C01B032/184（3）
C30B029/02（3） C01B032/182（2） C30B001/02（2）
C30B029/64（2） H01L029/16（2）
发明人
公开年 2018（4）
申请年 2017（5）
专利权人

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Microfluidic device for X-ray scattering or diffraction, comprises a top layer comprising top support layer and top layer(s) of graphene, a bottom layer comprising bottom support layer and bottom layer(s) of graphene, and a middle layer.

SUI S, WANG Y, DIMITRAKOPOULOS C, PERRY S L

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X