国家/地区 韩国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/26（4） H01L021/02（3） H01L029/16（3）
C01B032/182（2） C01B032/184（2） C01B032/186（2）
H01L029/786（2）
发明人 CHO K（2） PARK J（2） PARKJAEHYUN（2）
公开年 2018（2） 2019（2） 2020（2）
申请年 2018（6）
专利权人 KOREA INST S.（2）

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Patterning metal on graphene oxide material surface, comprises irradiating surface of graphene oxide material with laser to reduce laser irradiated graphene oxide surface portion, and plating reduced graphene oxide surface with metal.

PARK S Y, SU Y C, YANG J U, CHO Y J, CHO K

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S