国家/地区 韩国（3） 美国（3） 中国（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） C01B（4） H01L（3）
IPC C23C016/26（6）
发明人 LEE C（2） LEE C S（2） SHIN H（2）
SHIN H J（2） WANG C（2）
公开年 2021（3） 2022（2）
申请年 2021（6）
专利权人 SAMSUNG ELEC.（2）

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Method for preparing high infrared element used in aerospace field, involves providing metal material, and graphene coating is obtained by chemical vapor deposition growth on surface of metal material.

YUAN H, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S