国家/地区 台湾（6）
IPC部 C（6） H（4）
IPC大类 C23（6）
IPC小类 C23C（5） H01L（4） C01B（3）
H01J（2）
IPC C23C016/26（4） C23C016/04（3） H01L021/02（3）
H01L021/768（3） C01B032/186（2） C23C016/34（2）
C23C016/40（2） C23C016/452（2） C23C016/56（2）
H01J037/32（2） H01L021/285（2）
发明人 NARKEVICIUTE I（2） SHARMA K（2） VARADARAJAN B N（2）
公开年 2021（6）
申请年 2021（6）
专利权人 LAM RES CORP（2）

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Fastener comprises body, and outer coating layer applied to body and including metal powder particles, nano-zinc particles, and graphene particles uniformly dispersed.

LIU H, SHEN D, LIU M, HUANG Y, ZHANG B

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Electro-optic device e.g. phase shifter, has crystalline magnesium oxide seed layer located directly on amorphous insulating cladding layer, and crystalline electro optic layer directly located on crystalline MgO seed layer.

THOMPSON M, WONGPIYA R, CHANG C

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K