国家/地区 中国（5）
IPC部 C（5）
IPC大类 C22（5）
IPC小类 C22F（5） C23C（4） C21D（3）
C22C（2） H01M（2）
IPC C22F001/02（5）
发明人 LI J（2） WANG X（2）
公开年 2022（3） 2023（2）
申请年 2022（5）
专利权人

Preparing graphene-doped copper bonding wire comprises taking graphene oxide, mixing with mixed metal powder to obtain molten mixed powder, placing semi-finished product wire into aqueous solution of reducing agent for heating, annealing, washing and drying.

FENG Z, QU S, LIU B, WANG T, LIN L

Preparing rGO/silicon dioxide coating on aluminum-magnesium-silicon alloy plate surface, comprises selecting polar plate, using computer engraving technology to engrave single-channel snake-shaped flow field, and removing oil and impurity.

SHAO C, HUANG J, YUAN B, LIU J, ZHANG L

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing copper-based graphene composite material comprises growing graphene film on surface of copper foil by chemical vapor deposition, stacking, using ultrasonic welding technology to weld stacked components, and removing stress and annealing welded stack assembly.

WANG E, WANG X, HE M, ZHANG R, ZHAO C, HU X, LIU K, FU Y

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z