国家/地区 中国（5）
IPC部 C（3） B（2） G（2）
H（2）
IPC大类 B82（2） C01（2） H01（2）
IPC小类 B82Y（2） C01B（2） H01L（2）
IPC B82Y040/00（2） C01B031/04（2） C01B032/194（2）
发明人 GU C（4） LI J（4） QUAN B（2）
TANG C（2） YANG H（2） ZHANG H（2）
公开年 2016（4）
申请年 2016（5）
专利权人 CHINESE ACAD SCI PHYSICS INST（5）

Ultra-short channel transistor, has graphene layer covered on semiconductor substrate that is formed with gap, and source electrode arranged on semiconductor layer, where side part of semiconductor layer extends to semiconductor substrate.

XIE L, ZHANG G, SHI D

Regulating and controlling graphene band gap comprises preparing graphene sample on substrate, coating electron beam resist, coating electrode, exposing, developing, fixing to form and etching spin-coated electron beam resist.

GU C, ZHANG H, YANG H, TANG C, LI J

Method for preparing surface enhanced Raman substrate used in research area, involves coating metal particle on surface layer of graphene nano-sheets, so as to obtain surface enhanced Raman substrate.

GU C, LI J, QUAN B, WANG Y

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H

Growing graphene on insulation substrate involves cleaning insulation substrate and dispersed graphene micro-particles, placing product in hot filament chemical gas phase deposition system and carried out growth process.

GU C, LI J, LI W, XU S