国家/地区 中国（6）
IPC部 C（4） B（3） A（2）
IPC大类 C01（4） B82（2）
IPC小类 C01B（4） B82Y（2）
IPC C01B031/04（3） B82Y040/00（2）
发明人 CHEN X（2） GUO L（2） LI L（2）
SHI D（2） ZHANG G（2）
公开年 2013（6）
申请年 2011（3）  2012（3） 
专利权人 CHINESE ACAD SCI PHYSICS INST（6）

Composite graphene nano-sheet used in coating silicon nano-cone for corner crimping machine comprises surface with silicon nano-cone array substrate forming nano-layer of graphene on surface of silicon cone array.

TIAN S, LI J, GU C, LI L, SUN W, XIA X

Silicon carbide ohmic electrode structure, has silicon carbide substrate made of silicon carbide single crystal or silicon carbide epitaxial layer, and graphene layer forming single layer or multi-layer structure.

CHEN X, GUO L, LIU C

Nano graphene tunneling artificial skin, has metal electrode and graphene layer provided with sensing device for sensing stress on flexible substrate, where nano graphene surface is prepared on silicon substrate.

ZHANG G, SHI D, ZHAO J

Preparing graphene comprises synthesizing graphene on transition metal substrate, performing vapor deposition of hafnium on graphene, and annealing to form hafnium intercalated layer between graphene and metal substrate.

GAO H, LI L, WANG Y

Hetero-epitaxial growth method involves growing graphene on single crystal substrate having crystal lattice by plasma enhanced chemical vapor deposition method.

SHI D, ZHANG G, ZHANG L

Nanocrystalline silicon carbide/graphene heterojunction prepared by coating outer surface of silicon carbide nanoparticle with graphene and then annealing under argon gas atmosphere, useful for photocatalytic degradation of organic matter.

GUO L, CHEN X, LIN J, JIA Y, ZHU K