国家/地区 中国（6） 世界知识产权组织（2）
IPC部 C（3） H（3）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC C01B031/04（2） H01L021/283（2）
发明人 XIE X（4） DING G（3） JIANG M（2）
YANG X（2） ZHANG Y（2）
公开年 2012（3） 2011（2）
申请年 2011（3）  2012（3） 
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEMS（6）

Method for preparing high-k gate medium on surface of multi-layer graphene, involves depositing metal oxide thin film on graphene surface by using atom layer depositing method and adopting metal oxide thin film as high-k gate medium layer.

WANG H, XIE X, YANG X, ZHANG Y

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Method for gradually thinning graphene to obtain graphene nano structure, involves removing top layer of multilayer graphene by anisotropy oxidation process, annealing and processing multi-plasma treatment and high temperature annealing.

DING G, JIANG M, XIE X, YANG X

Graphene imaging method, involves transferring large area graphene film to imaged substrate with groove from solution, and breaking graphene in groove area via surface tension of solution to obtain required imaged graphene.

LI T, WANG W, WANG Y

Graphene base FET preparing method, involves utilizing nucleating layer and water as oxidant to be reacted with hafnium source, and generating hafnium oxide grid medium layer on graphene layer.

CHENG X, HE D, WANG Z, XIA C, XU D, YU Y, ZHANG Y