国家/地区 韩国（18） 美国（15）
IPC部 H（12） G（10） C（7）
B（4） A（2）
IPC大类 H01（10） G01（6） C01（5）
G02（4） B82（2） C23（2）
H05（2）
IPC小类 H01L（7） C01B（5） G01N（4）
G02B（4） G02F（3） C23C（2）
H01B（2）
IPC C01B031/04（4） C01B031/02（3） G01N027/12（3）
G02B006/12（3） G02F001/01（3） C23C028/00（2）
G01N027/414（2） G02B006/02（2） H01B005/14（2）
H01B013/00（2） H01L029/16（2） H01L029/66（2）
H01L031/0224（2） H01L031/028（2）
发明人 CHOI C G（19）
公开年 2014（8） 2016（4） 2015（3） 2019（2）
申请年 2014（6）  2013（5）  2016（3） 
专利权人 ELECTRONICS TELECOM RES INST（19）

Button device for humidity sensor e.g. electrical resistance type humidity sensor, has temperature sensor arranged adjacent to sensing region to sense temperature of sensing region, and porous structure including body including outer surface defining through-holes, where body comprises air gap.

YI Y, MIN B K, SHUVRA M, CHOI C G, KI M B, LEE Y

Pressure-strain sensor comprises graphene structure having three-dimensional porous structure, planar sheets is provided on surface of graphene structure and polymer layer which is configured to cover graphene structure and planar sheets.

KIM S J, CHOI C, MONDAL S, KIMSEONGJUN, CHOI C G, SHUVRA M

Composite material for electromagnetic wave shielding, has magnetic material particles that are provided between porous graphene structure and organic polymer layer and selectively provided on graphene film.

CHOI C G, KI M B, TAM V N

Optical coupler for use in communication field, has graphene light source for radiating graphene and delivering graphene to optical waveguide through combiner, where combiner is fixed on waveguide that is arranged on substrate.

KIM J T, CHOI C G, YU Y J, LEE Y S, CHOI J S, CHOI H K

Manufacturing method of graphene device involves growing graphene (GRP) on substrate in which the pattern with a material-containing carbon.

PARK S R, CHOI C G

Photo detector for detecting incident light by using arrangement of single-layer graphene and multi-layer graphene, has first electrode formed at end of single-layer grapheme, and second electrode formed at end of multi-layer graphene.

KIM J T, CHOI C G, YU Y J, CHUNG K H, CHOI J S, CHOI H K

Manufacture of graphene involves forming double metal catalyst layer comprising two metal layers by calculating thickness ratio of metal layers, and growing graphene using chemical vapor deposition on double metal catalyst layer.

CHOI J S, CHOI H K, CHOI C G, YU Y J, KIM J T, CHUNG K H, HWANG C Y

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Method for fabricating nanowire and graphene- sheet hybrid structure of transparent electrode, involves dipping substrate in graphene sheet dispersed solution, and performing thermal treatment to remove surface between line patterns.

YOUN D H, CHOI C G, KIM J S, YU Y J, CHOI J S, CHOI H K

Method for growing single-layer graphene used for graphene device, involves forming silicon oxide layer, forming multilayer catalyst layer having nickel and copper layers with preset thickness ratio, and growing single-layer graphene.

CHOI J S, CHOI H K, KIM K C, YU Y J, KIM J S, CHOI C G