国家/地区 韩国（16） 美国（14）
IPC部 B（16）
IPC大类 H01（9） C01（8） B01（6）
B82（6） G01（3） B05（2）
B23（2） B32（2） C12（2）
D01（2）
IPC小类 C01B（8） H01L（5） B01J（3）
B82B（3） B82Y（3） G01N（3）
B01D（2） B01L（2） B05D（2）
B23K（2） B32B（2） C12Q（2）
D01D（2） H01B（2） H01G（2）
IPC C01B031/04（6） C01B031/02（4） B82B003/00（3）
B01L007/00（2） B05D007/24（2） B23K026/20（2）
B82Y040/00（2） C12Q001/686（2） D01D005/00（2）
G01N021/64（2） H01G011/32（2） H01L021/02（2）
H01L023/00（2）
发明人 CHOI C G（4） CHUNG K H（4） KIM J T（4）
YU Y J（4） CHOI J S（3） YOUN D H（3）
YU Y（3） YUN Y J（3） CHANG K S（2）
CHOI G（2） CHOI K（2） EOM Y S（2）
GYOO K I（2） JANG K S（2） JOO J（2）
公开年 2014（4） 2013（3） 2015（2） 2022（2）
申请年 2014（4）  2012（3）  2013（3）  2021（2） 
专利权人 ELECTRONICS TELECOM RES INST（16）

Laser contacting process used for bonding semiconductor elements, involves controlling amount of laser light absorbed by laser control structure, and bonding contacting sections and contacting object.

JANG K S, EOM Y S, CHOI G, CHOI K, JOO J, MOON S, LEE C, CHANG K S, MUN C K, JOO J H, MOON S H, LEE C M, WEN S, ZHU Z, CUI G, YAN L, CHANG K

Fabricating semiconductor package by preparing a lower element including lower substrate, lower electrode, under bump metallurgy layer and reducing agent layer, providing upper element, providing pressing material, and providing laser beam.

JANG K S, LEE C, MOON S, CHOI G, JOO J, EOM Y S, CHOI K, JOO J H, MUN C K, MOON S H, LEE C M, CHANG K S

Device for amplifying and detecting gene, comprises gene amplification chip comprising channels through which sample flows, transparent heaters comprising graphene layer provided on metal thin-film layer, and insulating hole.

CHUNG K H, KIM J T, CHUNG K

Three-dimensional graphene structure preparation involves forming graphene precursor by heating carbohydrate and gas generator, forming graphene structure having cavity by carbonizing graphene precursor, and then forming nanopores.

KIM T, YOU I, KIM B N, KIM I G, JUNG S, PARK S, YOUNG K T, KYU Y I, NA K B, GYOO K I, HOON J S, JUN P S

Manufacturing electrode used for capacitor, comprises forming an oxidized graphene thin film by applying composition containing oxidized graphene on a substrate, and irradiating obtained graphene oxide film with light.

SUK Y Y, KYU Y I, HWAN S J, NA K B, GYOO K I, HONG S

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Method for manufacturing self light-emitting device, involves contacting graphene layer of graphene donor unit with organic part, and removing release layer and elastic stamp layer from graphene donor unit.

LIM J T, LEE J I, CHU H Y, AHN J T, LEE J, HAN J, OH J, YU B G, MOON J, CHO N S, HAN J H, OH J Y

Graphene-gold nanoplate structure for treating cancer tissue of patient, has triangular shaped gold nano-plate attached to substrate and arranged at predetermined interval, and graphene wrapped around gold nano-plate.

KIM W, JUNG M, WAN J K, MOON Y J

Manufacture of graphene hybrid material for e.g. for biological sensors involves preparing nanoparticles, biomaterial solution, and graphene oxide solution and mixing with biomaterial solution to form biomaterial-coated nanoparticles.

YUN Y, SONG K, YUN Y J, SONG K B

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J