国家/地区 日本（4）
IPC部 H（4） C（3）
IPC大类 H01（4） C01（3）
IPC小类 H01L（4） C01B（3）
IPC C01B031/02（3） H01L021/336（3） H01L029/786（3）
发明人 IWAI D（3） HIROSE S（2） KONDO T（2）
公开年 2009（3） 2008（2）
申请年 2007（5）
专利权人 FUJITSU LTD（5）

Manufacturing method of graphene sheet used for manufacturing of semiconductor device involves heating carbonized material layer at predetermined temperature.

KONDO T, SATO S

Package for mounting e.g. high power amplifier for mobile phone, has flexible carbon nanotube sheet that consists of graphene and carbon nanotube bundle on mounting surface of electronic device chip.

IWAI D, KONDO T

Electronic device manufacturing method involves regulating crystal orientation along extension direction of graphene and width of graphene with scanning probe microscope.

HIROSE S, IWAI D, OFUCHI M, OBUCHI M

Graphene transistor e.g. FET for high frequencies, has gate electrode that is formed while forming source electrode in one edge, and drain electrode on other edge of insulator.

HIROSE S, IWAI D

Manufacture of surface-modified carbon nanomaterial for electronic component, involves irradiating material having carbon nanotube and graphene with vacuum ultraviolet ray, and supplying substance modifying surface of nanomaterial.

ASANO K