国家/地区 日本（9） 美国（2）
IPC部 H（5） G（3） C（2）
IPC大类 H01（5） G01（3） C01（2）
IPC小类 H01L（5） G01N（3） C01B（2）
IPC H01L029/786（4） H01L051/05（4） H01L051/30（3）
H01L051/40（3） G01N027/00（2） G01N027/12（2）
H01L029/06（2）
发明人 HARADA N（9）
公开年 2017（3） 2009（2）
申请年 2008（3）  2016（3） 
专利权人 FUJITSU LTD（9）

Gas sensor for e.g. diagnostic apparatus for detecting ammonia while diagnosing of stomach cancer, has graphene film formed in channel semiconductor region, where carrier movement from semiconductor regions of source to channel is increased.

HARADA N

Electronic device e.g. diode, has graphene nanoribbon having graphenes, electrode coupled to one graphene terminated on edge by terminal group, and electrode coupled to other graphene terminated on edge by different terminal group.

HARADA N, JIPPO H

Gas sensor used for medical device, has graphene film which is provided in upper direction of semiconductor layer and contacts gas, and barrier film is positioned between semiconductor layer and graphene film.

HARADA N, SATO S, HAYASHI K, YAMAGUCHI J

Gas sensor applied to medical treatment and diagnostic apparatus, has first graphene layer that is laminated on barrier layer, and top metal electrode that is provided so that first graphene layer is partially exposed.

HARADA N

Electronic apparatus, particularly graphene transistor, comprises electrode electrically connected to graphene film, where graphene film has portion whose density of states is higher than another portion in connection portion with electrode.

HARADA N

Formation of graphene sheet-type material for e.g. manufacturing semiconductor integrated circuit device, involves modifying edge portion of graphene sheet by activated electron-donating functional group.

ASANO T, HARADA N

Bipolar FET e.g. e.g. bipolar graphene channel FET used in semiconductor integrated circuit device e.g. common-source circuit, has voltage application device which changes polarity of transistor, from direction of gate electrode.

HARADA N

Semiconductor device e.g. transistor has channel formed of bi-layer graphene film.

HARADA N, OFUCHI M

Graphene transistor e.g. graphene FET for electronic device, has carbon film whose width of side near source electrode of channel region is wider than width of carbon film of side near drain electrode of channel region.

HARADA N