国家/地区 日本（6）
IPC部 C（5） H（5）
IPC大类 C01（5） H01（5）
IPC小类 C01B（5） H01L（5）
IPC C01B031/02（5） H01L029/786（4） H01L021/336（3）
H01L029/06（2） H01L029/417（2） H01L051/05（2）
H01L051/30（2） H01L051/40（2）
发明人 SATO S（2）
公开年 2012（6）
申请年 2010（3）  2011（2） 
专利权人 FUJITSU LTD（6）

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S

Semiconductor device used as solar cell for electronic device, contains carbon nanotubes bonded with electrode formed using graphene and spaced apart with specified distance.

OFUCHI M, OBUCHI M

Electronic apparatus consists of column of openings which transverse flow of carrier from source electrode to drain electrode, formed between source and drain electrodes, with four carbons removed from graphene sheet in each opening.

JIPPO H

Semiconductor device with favorable contact between wiring structure and graphene layer, has gate electrode formed on gate insulating film which is formed on third area between first area and second area of graphene layer.

NIHEI M, SATO M

Formation of graphene sheet-type material for e.g. manufacturing semiconductor integrated circuit device, involves modifying edge portion of graphene sheet by activated electron-donating functional group.

ASANO T, HARADA N

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S