国家/地区 日本（7） 美国（2）
IPC部 C（5） H（4） B（3）
G（3）
IPC大类 C01（5） H01（4） G01（3）
B82（2）
IPC小类 C01B（5） H01L（4） B82Y（2）
G01N（2）
IPC C01B032/15（4） C01B032/18（4） C01B032/182（4）
H01L029/06（3） G01N027/00（2） H01L029/16（2）
H01L029/66（2） H01L029/88（2） H01L051/40（2）
发明人 HARADA N（3） YAMAGUCHI J（3） JIPPO H（2）
SATO S（2）
公开年 2017（7）
申请年 2016（6） 
专利权人 FUJITSU LTD（7）

Gas sensor for e.g. diagnostic apparatus for detecting ammonia while diagnosing of stomach cancer, has graphene film formed in channel semiconductor region, where carrier movement from semiconductor regions of source to channel is increased.

HARADA N

Semiconductor device used for field effect transistor, comprises ribbon-shaped catalyst layer formed on crystal substrate, layer containing ribbon-shaped boron nitride, for covering catalyst layer, and ribbon-shaped graphene.

KONDO T

Graphene nano ribbon used for electronic device, comprises zigzag-type edge structure at both ends along width direction, in which acene molecules united along length direction at edge portion in width direction are coupled with each other.

YAMAGUCHI J

Graphene nano ribbon for device e.g. magnetoresistive device comprises edge structure of zigzag type in both ends of width direction, and atom or molecule which is different to both ends.

SATO S, JIPPO H

Electronic device e.g. diode, has graphene nanoribbon having graphenes, electrode coupled to one graphene terminated on edge by terminal group, and electrode coupled to other graphene terminated on edge by different terminal group.

HARADA N, JIPPO H

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J

Gas sensor used for medical device, has graphene film which is provided in upper direction of semiconductor layer and contacts gas, and barrier film is positioned between semiconductor layer and graphene film.

HARADA N, SATO S, HAYASHI K, YAMAGUCHI J