国家/地区 中国（6）
IPC部 H（5） B（4） C（3）
IPC大类 H01（5） B82（4） C01（3）
IPC小类 H01L（5） B82Y（4） C01B（3）
IPC H01L029/16（5） H01L021/02（4） H01L021/336（4）
H01L029/778（4） H01L029/786（4） H01L021/00（3）
H01L029/66（3） H01L051/05（3） H01L051/30（3）
B82Y030/00（2） B82Y040/00（2） C01B031/02（2）
C01B031/04（2） H01L021/84（2） H01L023/532（2）
发明人 SATO S（6） KONDO D（3） HAYASHI K（2）
IWAI T（2）
公开年
申请年 2009（3） 
专利权人 FUJITSU LTD（6）

Gas sensor used for medical device, has graphene film which is provided in upper direction of semiconductor layer and contacts gas, and barrier film is positioned between semiconductor layer and graphene film.

HARADA N, SATO S, HAYASHI K, YAMAGUCHI J

Semiconductor device manufacturing method, involves forming catalyze membrane on insulator, forming graphene layer with electric conduction film, matching conduction film with insulator, and performing graphene layer thin changing process.

KONDO D, SATO S

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S

Graphite structure of electronic component e.g. thermoelectric conversion element, has domains that are formed by laminated structure of graphene sheet that are arranged in plane, such that adjacent domains are connected.

KONDO D, SATO S, IWAI T