国家/地区 中国（6） 世界知识产权组织（3） 美国（2）
IPC部 H（6）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L021/04（2） H01L021/20（2） H01L021/336（2）
H01L029/06（2） H01L029/66（2） H01L029/78（2）
发明人 LIANG Q（3） ZHU H（3） CHEN D（2）
JIN Z（2） LI C（2） LIU X（2）
LUO W（2） LUO Z（2） XIA Y（2）
XIE J（2） YE T（2） ZHONG H（2）
公开年 2013（6）
申请年 2012（6）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（6）

MOSFET, has source/drain region formed on semiconductor substrate, and gate conductor extended toward upper part of source/drain region, where semiconductor substrate is formed with oxide semiconductor substrate and graphene layer.

CHEN L, LUO Z, ZHU Z

Analog-to-digital converter, has multi-path distributor provided with multiple graphene channels and gate contact, where included angle is formed between each graphene channel and gate contact.

JIN Z, LIU X, YE T, CHEN D, LIANG Q, ZHU H, ZHONG H

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Method for thinning multi-layer graphene used in e.g. nano sensor, involves adjusting process parameter such as pulse bias voltage and plasma injection time of inert gas of plasma immersion ion implantation device.

XIE J, XIA Y, LI C, LUO W