国家/地区 韩国（6）
IPC部 H（6） C（3） B（2）
IPC大类 H01（6） B82（2） C01（2）
C23（2）
IPC小类 H01L（5） B82Y（2） C01B（2）
C23C（2）
IPC H01L029/78（4） H01L029/16（3） H01L029/786（3）
B82Y099/00（2） C01B031/04（2） H01L021/336（2）
发明人 CHO B J（6）
公开年 2012（3） 2014（2）
申请年 2012（2）  2013（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（6）

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Floating gate- or charge trap-type non-volatile memory device includes gate electrode made of graphene.

CHO B J, PARK J K

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H