国家/地区 韩国（5）
IPC部 C（4） H（4） B（2）
IPC大类 C01（4） H01（4） B82（2）
IPC小类 C01B（4） H01L（3）
IPC C01B031/04（4） C01B031/02（2） H01L029/786（2）
发明人 KIM C（2） KIM J H（2） KIM S H（2）
LEE S（2） LEE T（2） SEO M A（2）
SONG Y W（2） WOO D H（2） YI J C（2）
公开年 2015（4）
申请年 2014（5）
专利权人 KOREA INST SCI TECHNOLOGY（5）

Plasma monic all-optical switch, has graphene layer for transmitting incident beam between first dielectric layer and graphene layer, and pump beam arranged in nano antenna and operated between second dielectric layer and nano antenna.

KIM S H, KIM J H, KIM C, MOON K, SEO M A, WOO D H, LEE S, YI J C, LEE T, CHUNG Y

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating, involves forming DNA lamina molecular having base structure of array in order to absorb on second area of graphene layer.

KIM C, KIM Y J, JUNG Y M, JUN S C, LEE T, LEE S, BYUN Y T, WOO D H, KIM S H, SEO M A, KIM J H, YI J C

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M