国家/地区 韩国（5）
IPC部 C（4） G（3） H（3）
IPC大类 C23（4） C01（3） H01（3）
G02（2）
IPC小类 C23C（4） H01L（3） C01B（2）
IPC C01B032/184（2） C23C016/02（2） C23C016/455（2）
H01L021/02（2） H01L029/16（2）
发明人 PARK J（5）
公开年
申请年 2018（2） 
专利权人 KOREA INST SCI TECHNOLOGY（5）

Flash memory device for use in neuromorphic computing system, has blocking insulating layer that is arranged on floating gate and has second dielectric constant greater than first and upper gate that is disposed on blocking insulation layer.

KWAK J, PARK E P, LEE S Y, KIM I H, PARK J K, KIM J, KIL P J, JUNG Y J, JEONG Y, PARK J, KIM I, LEE S, PARK E, KWAK J Y

Masking block used e.g. to form pattern comprises base substrate, gamma-alumina thin film disposed on base substrate, and hexagonal boron nitride thin film doped with carbon and oxygen and disposed on gamma-alumina thin film.

LEE D, PARK J, PARKJAEHYUN, LEE D J

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Manufacturing method of electrode for hydrogen production, involves increasing activity of tungsten carbide nanoflake to hydrogen evolution reaction by removing oxide layer or graphene layer from surface of tungsten carbide nanoflake.

LEE W S, KO Y, BAIK Y J, PARK J, LEE K S, KIM I, JEONG D S, KO Y J, PARK J K