国家/地区 美国（5） 韩国（4） 中国（3）
IPC部 H（4） C（2）
IPC大类 H01（4） C01（2）
IPC小类 H01L（4） C01B（2）
IPC H01L029/16（3） C01B031/04（2） H01L021/336（2）
H01L029/06（2） H01L029/165（2） H01L029/66（2）
H01L029/78（2）
发明人 LEE J（5） LEE C（3） SHIN H（3）
SHIN H J（3） LEE C S（2） LEE J H（2）
LEE M（2） LEE M H（2） LI M（2）
PARK S（2） PARK S J（2）
公开年 2015（5）
申请年 2015（3）  2014（2） 
专利权人 LEE J（5）

Preparation of carbon sheets used in e.g. electronic devices, involves growing graphene nanopowder comprised in graphene seed layer into carbon sheet comprising single layered graphene sheet of preset length and graphite sheet.

LEE J, PARK Y, CHOI W, LEE J K, PARK Y S, CHOI W K

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Graphene device e.g. graphene transistor has gate insulating layer that is mounted on capping layer to cover channel region and gate is mounted on gate insulating layer between source electrode and drain electrode.

XIANYU W, MOON C, LEE J, LEE C

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M