国家/地区 韩国（9） 美国（3） 中国（2） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 C（9） B（7） H（2）
IPC大类 C01（9） B01（5） C23（3）
B32（2） H01（2）
IPC小类 C01B（9） B01J（5） C23C（3）
B32B（2） H01L（2）
IPC C01B031/02（8） B01J019/08（4） C01B031/04（3）
C23C016/26（3） B01J019/18（2） H01L051/00（2）
发明人 PARK W（9）
公开年 2013（6） 2014（2）
申请年 2012（6）  2013（2） 
专利权人 LG ELECTRONICS INC（9）

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Manufacture of graphene involves forming graphene layer on catalyst metal layer, forming protective layer on graphene layer, positioning support layer on protective layer and then removing catalyst metal layer.

JUNG M, PARK W, RHO J, MOON J

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Device, useful for producing graphene, comprises a current supply unit for supplying current to a formation area through a contact unit, and a storage unit that receives metal catalyst in roll state, where contact unit contacts chamber.

RHO J, PARK W, JUNG M, SEO B, MOON J

Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.

RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W