国家/地区 美国（5）
IPC部 H（5）
IPC大类 H01（5） H05（2）
IPC小类 H01L（5） H05K（2）
IPC H01L025/065（3） H01L023/00（2） H01L023/373（2）
H01L029/66（2）
发明人 NAKANO E（2） YOO C H（2）
公开年 2022（3） 2021（2）
申请年 2021（5）
专利权人 MICRON TECHNOLOGY INC（5）

Semiconductor device assembly, has thermally conductive material layer thermally conducting heat from between semiconductor devices outward in lateral direction perpendicular to vertical direction.

QU X, CHUN H

Anisotropic conductive film structure comprises array of discrete conductive regions within continuous region of adhesive dielectric material, where discrete conductive regions of array is mutually laterally spaced by pitch, and discrete conductive regions comprises conductive carbon-based material.

TUTTLE M E, NAKANO E

Semiconductor assembly comprises substrate having top surface and including graphene layer below top surface and configured to transfer thermal energy along lateral direction across substrate, semiconductor device over top surface of substrate, thermal connector and heat spreader.

NAKANO E, FAY O R, YOO C H

Transistor, comprises channel that comprises two-dimensional material adjacent to seed material, channel oriented perpendicular to base material, gate dielectric adjacent to two-dimensional material, and gates adjacent to gate dielectric.

SMYTHE J A, SANDHU G S, KULA W

Apparatus e.g. dual in-line memory module for performing thermal management, has die that is mounted over substrate and has multiple electrical connections in contact with corresponding one of multiple substrate pads.

RICHARDS R K, KINSLEY T H, KING G A, SHARMA Y, PAX G E, YOO C H