国家/地区 台湾（5）
IPC部 H（5） C（3） B（2）
G（2）
IPC大类 H01（5） C01（3） G11（2）
IPC小类 H01L（5） C01B（3） G11C（2）
IPC C01B031/04（3） H01L029/16（3） H01L029/778（3）
H01L051/05（3） H01L051/30（3） C01B031/02（2）
H01L021/336（2） H01L021/768（2） H01L023/532（2）
H01L029/06（2） H01L029/51（2） H01L029/78（2）
H01L029/786（2） H01L045/00（2）
发明人 SANDHU G S（3） SANDHU G（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 MICRON TECHNOLOGY INC（5）

Apparatus for voltage equalization for pillars of memory array, comprises access line, conductive pillar having first end configured for coupling with access line, conductive pillar having second end opposite first end of conductive pillar, memory cell coupled between conductive pillar and word line.

FANTINI P, BEDESCHI F, VILLA C

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Method of forming switch e.g. graphene-containing switch for use as select device in memory device e.g. memory array, involves electrically coupling graphene structure with exposed portion of bottom electrode.

SANDHU G S, SANDHU G

Electrically conductive laminate structure useful in electrical interconnect, comprises graphene region sandwiched between pair of non-graphene regions, where non-graphene region includes electrically conductive non-graphene region.

SANDHU G S