国家/地区 中国（13）
IPC部 H（9） B（4） C（2）
G（2）
IPC大类 H01（9） B82（3） G01（2）
IPC小类 B82Y（3） G01N（2） H01B（2）
H01G（2） H01L（2）
IPC B82Y030/00（2） B82Y040/00（2） G01N021/35（2）
H01B005/14（2） H01B013/00（2）
发明人 BAI B（4） DAI Q（4） HU D（3）
HU H（3） LIU R（3） YANG X（3）
LI X（2） WANG Y（2） ZHI L（2）
公开年 2016（7） 2015（5）
申请年 2015（13）
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（13）

Preparing carbon-silicon composite material comprises e.g. dispersing silicon nano-material, graphene and its derivatives and dispersant in a solvent, assembling into a macroscopic film, and subjecting into an annealing treatment.

LI X, ZHOU M, ZHI L

Graphene thin film electron source for use in vacuum electronic device, has first electrode formed with substrate, second electrode formed with electrode film, and semiconductor layer formed with insulation layer.

BAI B, DAI Q, LI Z, LI C

Use of graphene and molybdenum disulfide composite material as e.g. electromagnetic wave absorbing material.

WANG Y, WU F, XU P, YIN X, HE M, CHEN D

Method for detecting in-situ electrical graphene background deduction, involves producing plasmon enhancement components and infrared detection device, overlying graphene layer on dielectric layer, followed by determining.

BAI B, DAI Q, HU D, HU H, YANG X, LIU R

Graphene plasmon device used for enhancing infrared spectrum detection, comprises gate electrode, dielectric layer made of e.g. sodium chloride, graphene layer, source electrode, drain electrode metal layer and to-be-detected material.

BAI B, DAI Q, HU D, HU H, YANG X, LIU R

Graphene plasmon enhanced infrared spectrum detection based spectral line peak value separating method involves detecting need for determining preset range and increasing gate voltage so that intrinsic signal in masked peak is revealed.

BAI B, DAI Q, HU D, HU H, YANG X, LIU R

Functional graphene material useful as e.g. organic vapor adsorbent comprises two-dimensional graphene sheet layer as basic building block for forming three-dimensional porous network structure.

HAN B, SUI Z

Preparation of graphene transparent and electrically conductive thin film involves contacting graphene oxide film with reducing agent solution, carrying out reduction reaction, and cleaning.

NING J, QIU X, ZHI L, JIN M

Graphene site effect transistor, has insulation layer placed between graphene layer and source leakage electrode layer and formed in active region area, and top gate electrode fixed across source electrode and leakage electrode.

CHU W, DONG F, XU L, YAN L, ZHAO M

Preparation of patterned graphene used for flexible electrode, field effect transistor, sensor part or display device, by forming graphite sheet target pattern into copper foil surface, heating, and growing.

DU M, FANG Y, LI L, LI X