国家/地区 美国（7） 韩国（6） 中国（4） 欧洲专利局（EPO）（3）
IPC部 H（7） G（4） C（3）
B（2）
IPC大类 H01（7） C01（3） G01（3）
G02（2）
IPC小类 H01L（6） C01B（3） G01J（2）
G01N（2）
IPC H01L029/16（3） C01B032/182（2） C01B032/186（2）
H01L021/02（2） H01L027/146（2） H01L031/028（2）
H01L031/09（2）
发明人 PARK S（4） LEE D（3） PARK S J（3）
SHIN H（3） SHIN H J（3） KIM S（2）
LEE D W（2） LEE J（2） LEE J H（2）
NAM S（2） NAM S G（2）
公开年 2018（7）
申请年 2017（6） 
专利权人 SAMSUNG ELECTRONICS CO LTD（7）

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Method of manufacturing multi-layered graphene film used as electrode in manufacture of e.g. battery, involves forming graphene sheet fragments by adjusting graphene growth time to be shorter than graphene growth time of graphene layer.

LEE D, KWON S

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Optical sensor for detecting target object in infrared region, comprises substrate, which is provided with topological insulator layer, where oxide layer is formed on topological insulator layer, and graphene layer is stacked on oxide layer.

KIM U, ROH Y, KIM J, IN C, CHOI H, KWON J, KIM U J, ROH Y G, KIM J S, IN C H, CHOI H Y, KWON J H

Multi-stack graphene structure, has graphene layers and thin dielectric layers stacked on one another, where graphene layers comprise amorphous graphene, and electric field applying electric field to graphene layers.

JOO W, KANG J, KIM S, BRONGERSMA M L, FAN S, JOO W J, KANG J H, KIM S J

Porous silicon composite clusters used in carbon composite for electrode, comprise porous core comprising silicon secondary particles comprising aggregates of silicon primary particles comprising silicon, silicon oxide and graphene.

SON I, LEE J, PARK S, HAN S, SON I H, LEE J M, PARK S Y, LEE J H, HAN S S, LI Z

Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.

LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J