国家/地区 台湾（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L023/532（3） H01L027/108（3） H01L021/02（2）
H01L021/768（2） H01L023/522（2） H01L029/78（2）
发明人 LI J（3） JIN W（2） KIM W D（2）
LEE H B（2） LEE J E（2） LEE M J（2）
LEEMINJOO（2） LI X（2） LIM H（2）
LIM H S（2） SHEN X（2） SHIN H J（2）
公开年 2022（5）
申请年 2021（4） 
专利权人 SAMSUNG ELECTRONICS CO LTD（5）

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Wiring structure for use in semiconductor device, has first conductive pattern, ohmic contact pattern, oxidation prevention pattern, diffusion barrier, and second pattern sequentially stacked in stated order on substrate.

JEONG G, LEE S, YOON J, YAMAMOTO K, SHIN H, BYUN K, CHO M, LIM H, ZHENG G, LI Z, YOUN J, SHAN B, SHEN X, LIM H S, JO M, BYUN K E, SHIN H J, SU Y J, LEE S Y, JUNG K O

Semiconductor device comprises second level wiring which is disposed at second metal level higher than first metal level, and includes second via connected to first line wiring, and second line wiring connected to second via.

LEE H B, KIM W D, LEE M J, LEE J E, LEEMINJOO, LI X, JIN W, LI M, LI J