国家/地区 中国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L021/28（3） H01L021/02（2） H01L021/285（2）
H01L029/423（2）
发明人 LIU G（5）
公开年 2021（4）
申请年 2021（4） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Method for integrating of thin film material, involves forming functional material layer on upper surface of graphene layer, forming rigid temporary substrate layer on upper surface of graphene layer, and forming temporary bonding glue layer on surface of rigid temporary substrate layer.

ZHANG M, XUE Z, JIANG H, TIAN Z, LIU G, DI Z

Manufacturing transistor structure involves forming graphene layer on an upper surface of substrate, and forming source/drain electrode layer on upper surface of graphene layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing top gate structure for semiconductor structure, involves mechanically peeling laminated structure, transferring stacked structure to target substrate, and removing support layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing electrode layer in semiconductor structure, involves providing substrate, forming graphene layer on upper surface of substrate, forming electrode layer on upper surface of graphene layer, and removing supporting layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for manufacturing dielectric material and semiconductor structure, involves transferring laminated structure to target substrate, removing supporting layer, and leaving dielectric material layer on surface of target substrate.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M