国家/地区 中国（6）
IPC部 C（4） H（2）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2） C23C（2） H01L（2）
IPC C01B032/194（2） C23C014/18（2） C23C014/30（2）
C23C014/35（2） C23C014/48（2） C23C014/58（2）
C23C016/26（2） C23C028/00（2）
发明人 XUE Z（6）
公开年 2018（6）
申请年 2018（5） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Method for directly preparing graphene quantum dot array on insulating substrate, involves subjecting germanium quantum dot array in structure to oxidative volatilization treatment to remove germanium quantum dot array.

DI Z, ZHENG P, DONG L, XUE Z

Directly preparing graphene on insulating substrate comprises e.g. providing an insulating substrate, forming germanium layer and grapheme layer on upper surface of insulating substrate from bottom to top, and removing germanium layer.

DI Z, ZHENG P, DONG L, XUE Z

Method for preparing silicon-graphene based photodetector, involves providing silicon on insulator substrate and etching first openings and second openings spaced apart in top silicon, followed by forming fixed layer on surface of structure.

DI Z, MA Z, XUE Z, ZHANG M, MEI Y

Preparation of doped graphene involves providing substrate, forming protective layer on graphene layer, injecting doping element into graphene layer from upper surface of protective layer using ion implantation process and activating.

ZHANG M, GAO M, HAN X, JIA P, XUE Z, DI Z

Method for transferring graphene used in flexible electronic application, involves providing substrate, growing graphene on substrate, forming graphene/substrate structure, coating parylene on graphene and removing substrate.

ZHANG M, GAO M, HAN X, XUE Z, DI Z

Method for preparing graphene on insulator, involves providing supporting substrate and bonded structure obtained on upper surface of and removing sacrificial substrate by oxidation technology to obtain transferred graphene on insulator.

XUE Z, WANG T, JIA P, DI Z, ZHANG M