国家/地区 中国（5）
IPC部 C（4） H（3）
IPC大类 C01（4） H01（3）
IPC小类 C01B（4） H01L（3）
IPC C01B032/186（2） H01L021/02（2）
发明人 DI Z（5）
公开年 2017（5）
申请年 2015（4） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Preparing directly layer of controllable graphene on insulating substrate comprises forming insulating substrate on first metal layer, injecting carbon ions, forming second metal layer on surface of first metal layer and annealing.

DI Z, WANG Z, WANG G, ZHENG X, DAI J, XUE Z, ZHANG M, WANG X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Method for preparing metal semiconductor alloy layer, involves performing ion implantation on surface of defective graphene-forming metal layer to obtain controllable density graphene defect.

ZHANG B, MENG X, YU W, DI Z, ZHANG M

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X