国家/地区 中国（9）
IPC部 C（9）
IPC大类 C23（5） C01（3） C03（2）
IPC小类 C23C（5） C01B（3）
IPC C23C016/02（3） C23C016/26（3）
发明人 ZHANG Y（9）
公开年 2017（9）
申请年 2016（6）  2015（3） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（9）

Graphene glass has graphene film which is completely sealed between adhered glasses, so that first glass and second glass are not adhered by portion separated by graphene film.

ZHANG Y, YU G, CHEN Z, SUI Y, GE X, DENG R, LIANG Y, HU S

Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry transfer of graphene metal substrate comprises placing long graphene metal substrate on target substrate, heating under protective atmosphere at melting temperature or more and cooling to room temperature.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Graphene film surface hydrophilicity improvement involves configuring surfactant solution, and then placing graphene film with substrate in surfactant solution for period of time.

CHEN Z, YU G, ZHANG Y, SUI Y, GE X, HU S, LIANG Y

Growing of graphene with unbonded metal, involves depositing oxide on one surface of metal foil, defining other surface as metal surface, and stacking or rolling up metal foil on oxide surface towards metal surface.

YU G, ZHANG Y, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Preparation of graphene glass involves providing glass component and graphene film and then processing, providing glass component and then covering using graphene film, carrying out heat treatment, and completely sealing.

ZHANG Y, YU G, CHEN Z, SUI Y, GE X, DENG R, LIANG Y, HU S

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Non-adhesion graphene preparing metal foil layer stacking method, involves stacking layers of metal foil, separating metal foil, and utilizing chemical vapor deposition in each surface of metal foil stacked structure to prepare graphene.

ZHANG Y, YU G, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S