国家/地区 中国（18）
IPC部 H（13） C（3） G（3）
IPC大类 H01（12） C01（3） G01（3）
IPC小类 H01L（12） C01B（3） G01J（2）
IPC H01L021/336（4） H01L029/78（4） C01B031/04（2）
H01L021/768（2） H01L023/522（2） H01L029/10（2）
H01L029/16（2） H01L029/51（2） H01L031/028（2）
H01L031/113（2）
发明人 KANG X（18）
公开年 2015（4） 2018（4） 2017（3） 2020（3） 2012（2） 2014（2）
申请年 2014（6）  2017（5）  2011（2）  2018（2）  2020（2） 
专利权人 SHANGHAI INTEGRATED CIRCUIT RES DEV CE（18）

Air gap graphene field effect transistor structure, has channel whose surfaces are covered with air or vacuum contact, and gate electrode overlapped with source electrode and drain electrode, where channel is provided with air gap.

KANG X, CHEN S, ZHONG X, SHEN R

Photo-sensitive resistor for use in sensor has graphene layer to transmit electrons excited by quantum dot of incident light to electrodes when incident light enters photo-sensitive resistor main body to change resistance value of main body.

KANG X, ZHONG X

Preparing graphene channel structure comprises e.g. providing semiconductor substrate, and depositing thermal oxide layer on semiconductor substrate, etching thermal oxide layer, removing nickel thin film layer and copper filling layer.

ZHU J, KANG X

Graphene infrared sensor structure, has two ferroelectric material layers formed on graphene layer, where ferroelectric material layers have opposite repolarization directions to detect infrared signal.

KANG X

Graphene infrared sensor structure, has ferroelectric material layer fixed between graphene upper electrode and graphene lower electrode, where residual polarization of layer affects carrier density of electrodes to form differential signal.

KANG X

Infrared sensor for infrared sensing signal amplification circuit, has graphene material layer arranged on light-outlet side of ferroelectric material layer, and electrode whose position is fixed with ferroelectric material layer.

KANG X

Infrared sensor, comprises metal layer, ferroelectric material layer disposed on one side of metal layer, graphene material layer disposed on side of ferroelectric material layer away from metal layer and electrode layer.

KANG X

Graphite alkenyl sensor preparing method, involves injecting ion oxygen-containing plasma in graphene film, arranging graphene film with graphene oxide thin film, and forming upper electrode layer on surface of graphene oxide film.

KANG X

Method for manufacturing MEMS acoustic sensor based on graphene, involves fixing graphene film with MEMS acoustic sensor of upper electrode and lower electrode and arranging metal interconnection layer with lower electrode.

KANG X

Graphene FinFET transistor has gate dielectric layer which is formed outside graphene Fin thin film, and gate electrode that is formed outside dielectric layer across side walls and bottom portion of channel of graphene Fin thin film.

KANG X