国家/地区 日本（4） 世界知识产权组织（4） 韩国（3） 美国（3）
IPC部 C（4） H（4）
IPC大类 H01（4） C23（3） C01（2）
H05（2）
IPC小类 H01L（4） C23C（3） H01J（3）
C01B（2） H05H（2）
IPC C23C016/26（3） H01J037/32（3） H01L021/768（3）
C01B032/186（2） C23C016/44（2） C23C016/511（2）
H01L021/205（2） H01L021/28（2） H01L021/285（2）
H01L021/3205（2） H01L023/532（2） H05H001/46（2）
发明人 IFUKU R（3） MATSUMOTO T（3） RYOTA I（2）
SUGIURA M（2） TAKASHI M（2） UEDA H（2）
WADA M（2）
公开年 2021（3）
申请年 2020（5）
专利权人 TOKYO ELECTRON LTD（5）

Semiconductor device has interlayer insulating film which contains base material containing silicon oxide and hollow particles dispersed in base material, and hollow particle which is insulator having three-dimensional network structure.

NI Z Y, KATO D

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

Detecting abnormal growth of graphene by measuring reflection spectrum of measuring object having graphene film, creating film structure model to calculate polarization parameter, incorporating calculated value and detecting abnormal growth.

RYOTA I, TAKASHI M, AKIRA F, SHIN K