国家/地区 日本（4） 美国（4） 韩国（3） 世界知识产权组织（3）
IPC部 C（5） H（3）
IPC大类 C01（3） C23（3） H01（3）
IPC小类 C01B（3） C23C（3） H01L（3）
IPC C01B031/02（3） C23C016/26（3） C23C016/455（3）
C01B031/04（2） C23C016/02（2） C23C016/18（2）
C23C016/46（2） H01L021/28（2） H01L051/05（2）
H01L051/30（2）
发明人 KAGAYA M（5）
公开年 2014（2）
申请年 2015（2） 
专利权人 TOKYO ELECTRON LTD（5）

Forming method for base film of graphene involves heating substrate to temperature at which impurities included in formed metal film are eliminated as gas and to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D