国家/地区 美国（4） 日本（3） 韩国（2） 世界知识产权组织（2）
IPC部 H（5） C（2）
IPC大类 H01（5） C23（2）
IPC小类 H01L（5） C23C（2）
IPC C23C016/26（2） H01L021/02（2） H01L021/31（2）
H01L021/314（2） H01L021/768（2） H01L023/532（2）
发明人 IFUKU R（2） MATSUMOTO T（2） WADA M（2）
公开年 2023（5）
申请年 2022（4） 
专利权人 TOKYO ELECTRON LTD（5）

Semiconductor device comprises stack of layers defining sidewall surface and comprising source and drain layers, channel structure extending through stack of layers, oriented in vertical direction perpendicular to main surface of stack of layers.

FULFORD H J, GARDNER M I

Plasma processing apparatus such as capacitive coupling type plasma processing device has conductive material that is provided with conductive film formed on second surface not facing plasma processing space of silicon element.

SAKANE R

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Semiconductor device comprises substrate containing patterned copper film containing manganese, graphene layer disposed over exposed surfaces of copper film, first manganese-containing diffusion barrier layer, and first dielectric layer.

CLARK R D