国家/地区 中国（6）
IPC部 H（4） C（2） G（2）
IPC大类 H01（4） G02（2）
IPC小类 H01L（4） G02F（2）
IPC G02F001/00（2） H01L029/16（2）
发明人 WANG Y（3） CAI M（2） DU L（2）
HAO Y（2） HU Z（2） NING J（2）
WANG S（2） YUAN H（2） ZHANG J（2）
公开年 2020（6）
申请年 2020（5） 
专利权人 UNIV XIDIAN（6）

Silicon carbide-based ohmic contact graphene preparation method, involves stripping transfer electrode pattern to form front electrode, and performing annealing treatment to finish preparation of silicon carbide-based contact with graphene.

HU Y, JI Y, GUO H, LIANG J, HE Y, YUAN H, WANG Y

Graphene-based phase modulator has substrate layer, metal layer and sandwich structure that includes lower confinement layer, graphene layer and upper confinement layer that are arranged in order from bottom to top.

WANG S, ZHANG Q, HU Z, CAI M, DU L, ZHANG H, CHEN Y, ZHOU Z

Graphene transistor for digital integrated circuit, comprises patterned substrate with ellipsoidal protrusion, channel layer, gate dielectric layer, source electrode, drain electrode and gate electrode on channel layer side of substrate.

NING J, WANG Y, WANG D, ZHANG J, SHEN X, DONG J, MA P, HAO Y

Mid-infrared voltage adjustable filter has second graphene layer that includes second extension whose surface is plated with second metal film and cladding that is located on sandwich structure layer located on substrate layer.

WANG S, CAI M, DU L, WU Z, HU Z, WANG Y, HAN T, LIU H

Method for preparing metal oxide/graphene heterojunction transistor, involves preparing gate electrode layer on surface of gate insulating layer silicone dioxide to obtain metal oxide/graphene heterojunction transistor.

SU J, YUAN H, LIN Z, CHANG J

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y