国家/地区 中国（5）
IPC部 C（4）
IPC大类 C01（3） C23（2）
IPC小类 C01B（3） C23C（2）
IPC C01B031/04（3）
发明人 XU Z（5）
公开年 2012（5）
申请年 2012（5）
专利权人 XU Z（5）

Graphene continuous production device has annealing system, chemical vapor-phase deposition system and graphene fast cooling system integrated in vacuum chamber.

XU Z

Preparation of low-cost large area graphene transparent conductive film for electronic material, by dispersing graphene oxide or graphite chip in solvent, coating solution on substrate, recrystallizing at high temperature, and cooling.

XU Z

Transferring graphene thin film comprises directly adhering the graphene film to a polymer substrate, which are covalently bonded, exposing surface of film to contact with a growth substrate, and producing as functional device surface.

XU Z

Alloy method for preparing large area graphene thin film by depositing carbon alloy film on high temperature resistant substrate, annealing film, providing carbon atom concentration in alloy thin film surface and growing graphene thin film.

XU Z

Graphene light generating device, has container shell comprising ion salt solution, substrate, graphite film, two electrodes and two metal leads, and graphene thin film adhered to surface of substrate.

XU Z