国家/地区 中国（6）
IPC部 C（5） H（5） B（2）
IPC大类 C23（5） H01（5） B22（2）
C22（2）
IPC小类 C23C（5） H01H（3） B22F（2）
C22C（2）
IPC C23C016/26（5） C23C016/44（3） C22C001/05（2）
发明人 MA Y（5） SHEN H（5） CAO H（4）
LV X（3） QIAN T（3） YANG J（2）
公开年 2022（6）
申请年 2020（6）
专利权人 ZHEJIANG CHINT ELECTRICS CO LTD（6）

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H

Method for growing graphene on structured copper base, involves shaping copper powder and copper foil by isostatic pressing to form ingot, and growing graphene from ingot by chemical vapor deposition to form copper-based graphene.

ZHANG W, FU J, YANG J, SHEN H, MA Y

Growing graphene film on surface of copper powder, by heating copper powder or its mixture in chemical vapor deposition furnace to oxidation temperature, pre-oxidizing copper powder, continuously heating furnace to growth temperature, reducing surface of copper powder, growing graphene, and cooling.

CAO H, LV X, SHEN H, YANG J, MA Y

Method for preparing metal-based graphene composite material, involves growing graphene film on surface of metal powder by chemical vapor deposition in oxygen-free and preset environment to form a metal-based graphene composite material using mixed powder.

QIAN T, CAO H, SHEN H, LV X, MA Y

Method for preparing graphene-reinforced copper chromium electric contact material, involves cold pressing second mixed powder and sintered to obtain preform, and re-pressing and re-firing preform to obtain electrical contact material.

LV X, SHEN H, QIAN T, CAO H, MA Y

Surface coating method of metallic lithium belt useful in lithium electrode and lithium secondary battery, comprises e.g. dispersing micron-scale or lithium electrode active powder material, dropping slurry on surface of leveled metal lithium belt and cutting and sealing coated metal lithium belt.

SUN Q, ZHANG G, SHEN P, WEI W, NI W, GUO F