国家/地区 韩国（7） 美国（7） 世界知识产权组织（3）
IPC部 B（7） C（6） H（5）
IPC大类 B32（5） B82（5） C01（5）
H01（5） C23（4） B01（2）
B29（2） B41（2）
IPC小类 B32B（5） C01B（5） B82Y（4）
C23C（4） H01L（4） B01J（2）
B29C（2） B41M（2） B82B（2）
H01B（2）
IPC B32B009/00（5） B82Y030/00（4） C01B031/04（4）
C01B031/02（3） H01L029/16（3） H01L029/786（3）
B32B038/10（2） B41M005/03（2） B41M005/10（2）
B82B003/00（2） B82Y040/00（2） B82Y099/00（2）
H01B001/04（2） H01L021/02（2）
发明人 AHN J（7）
公开年 2011（3） 2014（2）
申请年 2009（2）  2010（2）  2013（2） 
专利权人 AHN J（7）

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Graphene semiconductor, useful in electrical device e.g. FET, single electron transistor and LED, comprises graphene and a metal atomic layer comprising a metal i.e. sodium disposed on graphene which transfers charge with the graphene.

AHN J, SEO J, PARK J, JEON C, AHN J R, JEON C H, PARK J H, SEO J T

Formation of graphene protective film used as gas and moisture barrier film, involves heating substrate and reacting with reaction gas containing carbon sources, and forming graphene film by dry process, wet process, or rolling process.

AHN J, BAE S K, HONG B H, KIM H K, LEE Y, HUI H B, HYEON A J, BIN L Y, GEUN K H, GANG B S

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Roll-to-roll transfer of graphene for producing graphene roll, involves transferring graphene layer on material to substrate by passing through roller portion, immersing obtained laminate into etching solution, and removing material.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, JANG H, JANG S, KOO J B, HONG B, KIM H, HUI H B, HYEON A J, GANG B S, GEUN K H

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U