国家/地区 韩国（6） 美国（3）
IPC部 C（4） H（3） B（2）
IPC大类 H01（3） B01（2） C01（2）
IPC小类 C01B（2） H01L（2）
IPC H01L021/768（2）
发明人 AHN S（6）
公开年 2022（5）
申请年 2021（6）
专利权人 KOREA INST S.（2） SAMSUNG ELEC.（2）

Transparent electrode for electronic device, has transparent conductive film made of transparent conductive material, and flakes of two-dimensional transition metal dichalcogenide material dispersed on surface of transparent conductive film.

KIMTAEWAN, PARK J H, CHO J, HEE J Y, YOON J H, AHN S, GWAK J, CHO A, YOO J S, EO Y J, KIM K H, SHIN D H, INYOUNG C, MIN S S, LEE S M, LEE A, CHAN H

Producing graphene useful in e.g. nanomaterial, ink, heat dissipation material, ultra-light material, energy electrode material, and transparent electrode, comprises performing heat treatment of trinaphthotrinaphthylene-based compound.

AHN S, HWANG J Y, KIM Y J, KANG M S

Producing graphene nanocomposite powder comprises charging metal wire into mixed solution in which graphene oxide is dispersed, and applying energy to metal wire charged in mixed solution to electrically explode metal wire.

HWANG J Y, AHN S, YANG C M, NAM J, GI L W, YU S

Semiconductor device, has first interconnection layer connected with first via and protruded upward from upper surface of insulating layer in direction, and interconnection structure provided with second via and second interconnection layer.

LEE W, JUNG D, LEE S J, AHN S, SHIN J, YOUNG J D

Semiconductor process wastewater treatment system used for removing ionic substances, has processing unit configured to receive semiconductor process wastewater and treat the semiconductor process wastewater through many operation and membrane filtration tank arranged separately from processing unit.

CHA M, KIM S, PARK C, AHN S, SEHYUK A, PARK C H, KIM S Y

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y