国家/地区 世界知识产权组织（4） 韩国（3） 美国（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（5） B（3）
IPC大类 H01（5） B82（3）
IPC小类 H01L（4） B82Y（3）
IPC H01L033/00（3） H01L033/12（3） B82Y040/00（2）
H01L021/02（2） H01L021/36（2） H01L029/06（2）
H01L033/02（2）
发明人 AN S J（5）
公开年 2012（3）
申请年 2011（4） 
专利权人 KUMOH NAT IN.（4） LG SILTRON I.（3） AN S（2） KIM S（2）
LEE D（2） SK SILTRON C.（2）

Method for manufacturing compound semiconductor device, involves forming lower graphene layer between substrate and lower compound semiconductor layer.

AN S J, LEE D K, KIM S H

Graphene transistor has graphene oxide layer whose upper side is arranged coplanar to upper side of graphene active layer.

AN S J

Compound semiconductor manufacturing method, involves forming graphene-derived material layer on selected substrate, and connecting compound semiconductor layer to graphene-derived material layer.

AN S J, LEE D G, KIM S H, AN S, LEE D, KIM S

Compound semiconductor device for light emitting device i.e. LED, has oxidation graphene layer provided with oxidation graphene sheets on part of surface of substrate, and buffer layer arranged between substrate and semiconductor layer.

AN S J, LEE D G, KIM S H, LEE D K, AN S, LEE D, KIM S

Depositing graphene material on substrate comprises providing suspension of graphene oxide platelets and substrate, and applying electric field across the suspension so as to deposit portion of graphene oxide platelets on substrate.

RUOFF R S, AN S J, STOLLER M, EMILSSON T, AGNIHOTRI D